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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1131MFV(TL3,T)

RN1131MFV(TL3,T)

RN1131MFV(TL3,T)
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Part Number RN1131MFV(TL3,T)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1759606 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs100 pcs
$0.083$0.075$0.068$0.049
250 pcs500 pcs1000 pcs2500 pcs
$0.029$0.024$0.016$0.014

Submit a Request For Quotation on quantities greater than those displayed.

Target Price:(USD)
Quantity:
Total:
$0.083

Product parameter

Part Number RN1131MFV(TL3,T) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1759606 pcs Data sheet RN1131,1132MFV
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package VESM Series -
Resistor - Base (R1) 100 kOhms Power - Max 150mW
Packaging Cut Tape (CT) Package / Case SOT-723
Other Names RN1131MFV(TL3T)CT Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA

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