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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1130MFV,L3F

RN1130MFV,L3F

RN1130MFV,L3F
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Part Number RN1130MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1927267 pcs
Reference Price
(In US Dollars)
8000 pcs
$0.012

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Quantity:
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$0.012

Product parameter

Part Number RN1130MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1927267 pcs Data sheet RN1130MFV
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package VESM Series -
Resistor - Emitter Base (R2) 100 kOhms Resistor - Base (R1) 100 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case SOT-723 Other Names RN1130MFV(TL3,T)
RN1130MFV(TL3T)TR
RN1130MFV(TL3T)TR-ND
RN1130MFV,L3F(B
RN1130MFV,L3F(T
RN1130MFVL3F
RN1130MFVL3F-ND
RN1130MFVL3FTR
RN1130MFVTL3T
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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