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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD2406-Y(F)

2SD2406-Y(F)

2SD2406-Y(F)
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Part Number 2SD2406-Y(F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 80V 4A TO220NIS
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4366 pcs
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Part Number 2SD2406-Y(F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 80V 4A TO220NIS Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4366 pcs Data sheet 2SD2406
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A Transistor Type NPN
Supplier Device Package TO-220NIS Series -
Power - Max 25W Packaging Tube
Package / Case TO-220-3 Full Pack Operating Temperature 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 8MHz
Detailed Description Bipolar (BJT) Transistor NPN 80V 4A 8MHz 25W Through Hole TO-220NIS DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V
Current - Collector Cutoff (Max) 30µA (ICBO) Current - Collector (Ic) (Max) 4A

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