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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD2129,LS4ALPSQ(M

2SD2129,LS4ALPSQ(M

2SD2129,LS4ALPSQ(M
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Part Number 2SD2129,LS4ALPSQ(M
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 3A 100V TO220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4504 pcs
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Part Number 2SD2129,LS4ALPSQ(M Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 3A 100V TO220-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4504 pcs Data sheet 2SD2129
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A Transistor Type NPN
Supplier Device Package TO-220NIS Series -
Power - Max 2W Packaging Bulk
Package / Case TO-220-3 Full Pack Other Names 2SD2129LS4ALPSQ(M
2SD2129LS4ALPSQM
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1.5A, 3V Current - Collector Cutoff (Max) 100µA (ICBO)
Current - Collector (Ic) (Max) 3A

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