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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC2235-O(T6FJT,AF

2SC2235-O(T6FJT,AF

2SC2235-O(T6FJT,AF

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Part Number	2SC2235-O(T6FJT,AF
Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 800MA 120V TO226-3
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4592 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	2SC2235-O(T6FJT,AF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 800MA 120V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4592 pcs	Data sheet	2SC2235
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA	Transistor Type	NPN
Supplier Device Package	TO-92MOD	Series	-
Power - Max	900mW	Packaging	Bulk
Package / Case	TO-226-3, TO-92-3 Long Body	Other Names	2SC2235-O(T6FJTAF 2SC2235OT6FJTAF
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	120MHz	Detailed Description	Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900mW Through Hole TO-92MOD
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	800mA

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