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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC2229-Y(TE6,F,M)

2SC2229-Y(TE6,F,M)

2SC2229-Y(TE6,F,M)
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Part Number 2SC2229-Y(TE6,F,M)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 50MA 150V TO226-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5022 pcs
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Part Number 2SC2229-Y(TE6,F,M) Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 50MA 150V TO226-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5022 pcs Data sheet 2SC2229
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 150V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA Transistor Type NPN
Supplier Device Package TO-92MOD Series -
Power - Max 800mW Packaging Bulk
Package / Case TO-226-3, TO-92-3 Long Body Other Names 2SC2229-Y(TE6FM)
2SC2229YTE6FM
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 120MHz Detailed Description Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800mW Through Hole TO-92MOD
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 50mA

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