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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RJK2009DPM-00#T0

RJK2009DPM-00#T0

RJK2009DPM-00#T0
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Part Number RJK2009DPM-00#T0
Manufacturer Renesas Electronics America
Description MOSFET N-CH 200V 40A TO3PFM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4575 pcs
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Part Number RJK2009DPM-00#T0 Manufacturer Renesas Electronics America
Description MOSFET N-CH 200V 40A TO3PFM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4575 pcs Data sheet RJK2009DPM Datasheet
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id -
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PFM Series -
Rds On (Max) @ Id, Vgs 36 mOhm @ 20A, 10V Power Dissipation (Max) 60W (Tc)
Packaging Tube Package / Case TO-3PFM, SC-93-3
Operating Temperature - Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 200V
Detailed Description N-Channel 200V 40A (Ta) 60W (Tc) Through Hole TO-3PFM Current - Continuous Drain (Id) @ 25°C 40A (Ta)

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