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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RJK2006DPE-00#J3

RJK2006DPE-00#J3

RJK2006DPE-00#J3
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Part Number RJK2006DPE-00#J3
Manufacturer Renesas Electronics America
Description MOSFET N-CH 200V 40A LDPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5264 pcs
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Part Number RJK2006DPE-00#J3 Manufacturer Renesas Electronics America
Description MOSFET N-CH 200V 40A LDPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5264 pcs Data sheet RJK2006DPE, DPF, DPJ
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id -
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package 4-LDPAK Series -
Rds On (Max) @ Id, Vgs 59 mOhm @ 20A, 10V Power Dissipation (Max) 100W (Tc)
Packaging Tape & Reel (TR) Package / Case SC-83
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 200V
Detailed Description N-Channel 200V 40A (Ta) 100W (Tc) Surface Mount 4-LDPAK Current - Continuous Drain (Id) @ 25°C 40A (Ta)

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