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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > JAN1N5618US

JAN1N5618US

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Part Number JAN1N5618US
Manufacturer Microsemi
Description DIODE GEN PURP 600V 1A D5A
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 6013 pcs
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Product parameter

Part Number JAN1N5618US Manufacturer Microsemi
Description DIODE GEN PURP 600V 1A D5A Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 6013 pcs Data sheet 1N5614US thru 1N5622US
Category Discrete Semiconductor Products Voltage - Forward (Vf) (Max) @ If 1.3V @ 3A
Voltage - DC Reverse (Vr) (Max) 600V Supplier Device Package D-5A
Speed Standard Recovery >500ns, > 200mA (Io) Series Military, MIL-PRF-19500/429
Reverse Recovery Time (trr) 2µs Packaging Bulk
Package / Case SQ-MELF, A Other Names 1086-2109
1086-2109-MIL
Operating Temperature - Junction -65°C ~ 200°C Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Diode Type Standard Detailed Description Diode Standard 600V 1A Surface Mount D-5A
Current - Reverse Leakage @ Vr 500nA @ 600V Current - Average Rectified (Io) 1A
Capacitance @ Vr, F -

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