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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMD53T2R

EMD53T2R

EMD53T2R
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number EMD53T2R
Manufacturer LAPIS Semiconductor
Description TRANS NPN/PNP PREBIAS 0.15W EMT6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1413623 pcs
Reference Price
(In US Dollars)		8000 pcs16000 pcs24000 pcs56000 pcs
$0.024$0.021$0.02$0.018

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Product parameter

Part Number EMD53T2R Manufacturer LAPIS Semiconductor
Description TRANS NPN/PNP PREBIAS 0.15W EMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1413623 pcs Data sheet EMT6 T2R Taping SpecEMD53
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 5mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package EMT6 Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names EMD53T2RTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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