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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMD3T2R

EMD3T2R

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Part Number	EMD3T2R
Manufacturer	LAPIS Semiconductor
Description	TRANS NPN/PNP PREBIAS 0.15W EMT6
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 771215 pcs
Reference Price (In US Dollars)	8000 pcs	16000 pcs	24000 pcs	56000 pcs
Reference Price (In US Dollars)	$0.037	$0.034	$0.031	$0.029

Product parameter
Data sheet

Product parameter

Part Number	EMD3T2R	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN/PNP PREBIAS 0.15W EMT6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	771215 pcs	Data sheet	EMT6 T2R Taping Spec EMD3, UMD3N, IMD3A
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA	Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package	EMT6	Series	-
Resistor - Emitter Base (R2)	10 kOhms	Resistor - Base (R1)	10 kOhms
Power - Max	150mW	Packaging	Tape & Reel (TR)
Package / Case	SOT-563, SOT-666	Other Names	EMD3T2R-ND EMD3T2RTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA	Base Part Number	*MD3

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