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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC123JMT2L

DTC123JMT2L

DTC123JMT2L
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Part Number DTC123JMT2L
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 150MW VMT3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1565837 pcs
Reference Price
(In US Dollars)		8000 pcs16000 pcs24000 pcs56000 pcs
$0.02$0.017$0.016$0.015

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Part Number DTC123JMT2L Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 150MW VMT3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1565837 pcs Data sheet VMT3 T2L Taping SpecDTC123J Series
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package VMT3 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case SOT-723 Other Names DTC123JMT2LTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number DTC123

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