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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC123JET1G

DTC123JET1G

DTC123JET1G
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Part Number DTC123JET1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 200MW SC75
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4765763 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs
$0.01$0.009$0.007
30000 pcs75000 pcs150000 pcs
$0.007$0.006$0.005

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Part Number DTC123JET1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 200MW SC75 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4765763 pcs Data sheet MUN2235, MUN5235, DTC123Jxx, NSBC123JF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SC-75 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 200mW Packaging Tape & Reel (TR)
Package / Case SC-75, SOT-416 Other Names DTC123JET1G-ND
DTC123JET1GOSTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 19 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SC-75 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number DTC123

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