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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > BSM180D12P3C007

BSM180D12P3C007

BSM180D12P3C007
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number BSM180D12P3C007
Manufacturer LAPIS Semiconductor
Description SIC POWER MODULE
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 190 pcs
Reference Price
(In US Dollars)		1 pcs
$190.264

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Product parameter

Part Number BSM180D12P3C007 Manufacturer LAPIS Semiconductor
Description SIC POWER MODULE Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 190 pcs Data sheet C Type Taping SpecBSM180D12P3C007
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5.6V @ 50mA
Supplier Device Package Module Series -
Rds On (Max) @ Id, Vgs - Power - Max 880W
Packaging Bulk Package / Case Module
Other Names Q9597863 Operating Temperature 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 32 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V Gate Charge (Qg) (Max) @ Vgs -
FET Type 2 N-Channel (Dual) FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV) Detailed Description Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module
Current - Continuous Drain (Id) @ 25°C 180A (Tc)

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