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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > BSM180D12P2C101

BSM180D12P2C101

BSM180D12P2C101
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number BSM180D12P2C101
Manufacturer LAPIS Semiconductor
Description MOSFET 2N-CH 1200V 180A MODULE
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 264 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs
$154.791$149.058

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Quantity:
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$154.791

Product parameter

Part Number BSM180D12P2C101 Manufacturer LAPIS Semiconductor
Description MOSFET 2N-CH 1200V 180A MODULE Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 264 pcs Data sheet C Type Taping SpecBSM180D12P2C101 DatasheetBSM180D12P2C101 Spec
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 35.2mA
Supplier Device Package Module Series -
Rds On (Max) @ Id, Vgs - Power - Max 1130W
Packaging Bulk Package / Case Module
Operating Temperature -40°C ~ 150°C (TJ) Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 32 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V Gate Charge (Qg) (Max) @ Vgs -
FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV) Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module
Current - Continuous Drain (Id) @ 25°C 204A (Tc)

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