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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPI35N10

SPI35N10

SPI35N10
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Part Number SPI35N10
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 35A I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4937 pcs
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Part Number SPI35N10 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 35A I2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4937 pcs Data sheet SPI,SPP35N10
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 83µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3-1 Series SIPMOS®
Rds On (Max) @ Id, Vgs 44 mOhm @ 26.4A, 10V Power Dissipation (Max) 150W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names SP000013852
SPI35N10X
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 35A (Tc) 150W (Tc) Through Hole PG-TO262-3-1
Current - Continuous Drain (Id) @ 25°C 35A (Tc)

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