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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPI21N10

SPI21N10

SPI21N10
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Part Number SPI21N10
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 21A TO-262
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4359 pcs
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Part Number SPI21N10 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 21A TO-262 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4359 pcs Data sheet SPI,SPP,SPB21N10 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 44µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3-1 Series SIPMOS®
Rds On (Max) @ Id, Vgs 80 mOhm @ 15A, 10V Power Dissipation (Max) 90W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names SP000013843
SPI21N10-ND
SPI21N10IN
SPI21N10X
SPI21N10XK
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 865pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38.4nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 21A (Tc) 90W (Tc) Through Hole PG-TO262-3-1
Current - Continuous Drain (Id) @ 25°C 21A (Tc)

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