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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPB18P06PGATMA1

SPB18P06PGATMA1

SPB18P06PGATMA1
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Part Number SPB18P06PGATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET P-CH 60V 18.7A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 65931 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs
$0.531$0.469$0.371$0.288

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Target Price:(USD)
Quantity:
Total:
$0.531

Product parameter

Part Number SPB18P06PGATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET P-CH 60V 18.7A TO-263 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 65931 pcs Data sheet SPB18P06P G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series SIPMOS®
Rds On (Max) @ Id, Vgs 130 mOhm @ 13.2A, 10V Power Dissipation (Max) 81.1W (Ta)
Packaging Cut Tape (CT) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names SPB18P06PGATMA1CT
SPB18P06PGINCT
SPB18P06PGINCT-ND
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V FET Type P-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V Detailed Description P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 18.7A (Ta)

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