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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPB12N50C3ATMA1

SPB12N50C3ATMA1

SPB12N50C3ATMA1
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Part Number SPB12N50C3ATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 560V 11.6A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5118 pcs
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Part Number SPB12N50C3ATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 560V 11.6A TO-263 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5118 pcs Data sheet SPB12N50C3
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.9V @ 500µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2 Series CoolMOS™
Rds On (Max) @ Id, Vgs 380 mOhm @ 7A, 10V Power Dissipation (Max) 125W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names SP000014894
SPB12N50C3
SPB12N50C3-ND
SPB12N50C3ATMA1TR
SPB12N50C3INTR
SPB12N50C3INTR-ND
SPB12N50C3XT
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 560V Detailed Description N-Channel 560V 11.6A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C 11.6A (Tc)

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