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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFH6200TR2PBF

IRFH6200TR2PBF

IRFH6200TR2PBF
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Part Number IRFH6200TR2PBF
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 20V 100A 5X6 PQFN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4564 pcs
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Part Number IRFH6200TR2PBF Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 20V 100A 5X6 PQFN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4564 pcs Data sheet IRFH6200PBF
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.1V @ 150µA
Vgs (Max) ±12V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-PQFN (5x6) Series HEXFET®
Rds On (Max) @ Id, Vgs 0.95 mOhm @ 50A, 10V Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Packaging Original-Reel® Package / Case 8-PowerVDFN
Other Names IRFH6200TR2PBFDKR Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 10890pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 230nC @ 4.5V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Drain to Source Voltage (Vdss) 20V Detailed Description N-Channel 20V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C 49A (Ta), 100A (Tc)

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