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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD12CNE8N G

IPD12CNE8N G

IPD12CNE8N G
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Part Number IPD12CNE8N G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 85V 67A TO252-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5695 pcs
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Part Number IPD12CNE8N G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 85V 67A TO252-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5695 pcs Data sheet IPx12CNE8N G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 83µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 12.4 mOhm @ 67A, 10V Power Dissipation (Max) 125W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names IPD12CNE8N G-ND
IPD12CNE8NG
SP000096477
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 85V Detailed Description N-Channel 85V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 67A (Tc)

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