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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD110N12N3GATMA1

IPD110N12N3GATMA1

IPD110N12N3GATMA1
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number IPD110N12N3GATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 120V 75A TO252-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 80420 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.829$0.748$0.601$0.468$0.387

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$0.829

Product parameter

Part Number IPD110N12N3GATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 120V 75A TO252-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 80420 pcs Data sheet IPx110N12N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3V @ 83µA (Typ)
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 11 mOhm @ 75A, 10V Power Dissipation (Max) 136W (Tc)
Packaging Cut Tape (CT) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names IPD110N12N3GATMA1CT Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 120V Detailed Description N-Channel 120V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 75A (Tc)

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