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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFV12N80P

IXFV12N80P

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Part Number IXFV12N80P
Manufacturer IXYS Corporation
Description MOSFET N-CH 800V 12A PLUS220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4739 pcs
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Part Number IXFV12N80P Manufacturer IXYS Corporation
Description MOSFET N-CH 800V 12A PLUS220 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4739 pcs Data sheet IXF(H,Q,V)12N80P/PS
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package PLUS220 Series HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs 850 mOhm @ 500mA, 10V Power Dissipation (Max) 360W (Tc)
Packaging Tube Package / Case TO-220-3, Short Tab
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 12A (Tc) 360W (Tc) Through Hole PLUS220 Current - Continuous Drain (Id) @ 25°C 12A (Tc)

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