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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M009A090N

GP1M009A090N

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Part Number	GP1M009A090N
Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 900V 9.5A TO3PN
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4882 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	GP1M009A090N	Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 900V 9.5A TO3PN	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4882 pcs	Data sheet	GP1M009A090N
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-3PN	Series	-
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 4.75A, 10V	Power Dissipation (Max)	312W (Tc)
Packaging	Tube	Package / Case	TO-3P-3, SC-65-3
Other Names	1560-1174-1 1560-1174-1-ND 1560-1174-5	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	2324pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	900V	Detailed Description	N-Channel 900V 9.5A (Tc) 312W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25°C	9.5A (Tc)

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