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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M009A090H

GP1M009A090H

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Part Number	GP1M009A090H
Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 900V 9A TO220
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5097 pcs
Reference Price (In US Dollars)	Get a quote

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Data sheet

Product parameter

Part Number	GP1M009A090H	Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 900V 9A TO220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5097 pcs	Data sheet	GP1M009A090(F)H
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-220	Series	-
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 4.5A, 10V	Power Dissipation (Max)	290W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	2324pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	900V
Detailed Description	N-Channel 900V 9A (Tc) 290W (Tc) Through Hole TO-220	Current - Continuous Drain (Id) @ 25°C	9A (Tc)

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