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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M008A080H

GP1M008A080H

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Part Number	GP1M008A080H
Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 800V 8A TO220
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5574 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
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Product parameter

Part Number	GP1M008A080H	Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 800V 8A TO220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5574 pcs	Data sheet	GP1M008A080(F)H
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-220	Series	-
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 4A, 10V	Power Dissipation (Max)	250W (Tc)
Packaging	Tube	Package / Case	TO-220-3
Other Names	1560-1170-1 1560-1170-1-ND 1560-1170-5	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	1921pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	800V	Detailed Description	N-Channel 800V 8A (Tc) 250W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25°C	8A (Tc)

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