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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M007A090H

GP1M007A090H

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Part Number	GP1M007A090H
Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 900V 7A TO220
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4996 pcs
Reference Price (In US Dollars)	Get a quote

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Product parameter

Part Number	GP1M007A090H	Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 900V 7A TO220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4996 pcs	Data sheet	GP1M007A090(F)H
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-220	Series	-
Rds On (Max) @ Id, Vgs	1.9 Ohm @ 3.5A, 10V	Power Dissipation (Max)	250W (Tc)
Packaging	Tube	Package / Case	TO-220-3
Other Names	1560-1165-1 1560-1165-1-ND 1560-1165-5	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	1969pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	900V	Detailed Description	N-Channel 900V 7A (Tc) 250W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25°C	7A (Tc)

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