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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M004A090FH

GP1M004A090FH

GP1M004A090FH
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Part Number GP1M004A090FH
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 900V 4A TO220F
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5165 pcs
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Part Number GP1M004A090FH Manufacturer Global Power Technologies Group
Description MOSFET N-CH 900V 4A TO220F Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5165 pcs Data sheet GP1M004A090(F)H
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220F Series -
Rds On (Max) @ Id, Vgs 4 Ohm @ 2A, 10V Power Dissipation (Max) 38.7W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-220-3 Full Pack
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 955pF @ 25V Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 900V
Detailed Description N-Channel 900V 4A (Tc) 38.7W (Tc) Through Hole TO-220F Current - Continuous Drain (Id) @ 25°C 4A (Tc)

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