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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M003A080PH

GP1M003A080PH

GP1M003A080PH
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Part Number GP1M003A080PH
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 800V 3A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5249 pcs
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Part Number GP1M003A080PH Manufacturer Global Power Technologies Group
Description MOSFET N-CH 800V 3A IPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5249 pcs Data sheet GP1M003A080xH
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package I-PAK Series -
Rds On (Max) @ Id, Vgs 4.2 Ohm @ 1.5A, 10V Power Dissipation (Max) 94W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 696pF @ 25V Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 3A (Tc) 94W (Tc) Through Hole I-PAK Current - Continuous Drain (Id) @ 25°C 3A (Tc)

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