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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > VS-GB100TH120N

VS-GB100TH120N

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Part Number	VS-GB100TH120N
Manufacturer	Electro-Films (EFI) / Vishay
Description	IGBT 1200V 200A 833W INT-A-PAK
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 289 pcs
Reference Price (In US Dollars)	12 pcs
Reference Price (In US Dollars)	$129.175

Product parameter
Data sheet

Product parameter

Part Number	VS-GB100TH120N	Manufacturer	Electro-Films (EFI) / Vishay
Description	IGBT 1200V 200A 833W INT-A-PAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	289 pcs	Data sheet	VS-GB100TH120N
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	1200V
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 100A	Supplier Device Package	Double INT-A-PAK
Series	-	Power - Max	833W
Package / Case	Double INT-A-PAK (3 + 4)	Other Names	VSGB100TH120N
Operating Temperature	150°C (TJ)	NTC Thermistor	No
Mounting Type	Chassis Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	38 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Cies) @ Vce	8.58nF @ 25V	Input	Standard
IGBT Type	-	Detailed Description	IGBT Module Half Bridge 1200V 200A 833W Chassis Mount Double INT-A-PAK
Current - Collector Cutoff (Max)	5mA	Current - Collector (Ic) (Max)	200A
Configuration	Half Bridge

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