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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SQD100N02-3M5L_GE3

SQD100N02-3M5L_GE3

SQD100N02-3M5L_GE3

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Part Number	SQD100N02-3M5L_GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 100A TO252AA
Lead Free Status / RoHS Status

~~In Stock~~ 87860 pcs
Reference Price (In US Dollars)	2000 pcs
Reference Price (In US Dollars)	$0.243

Product parameter
Data sheet

Product parameter

Part Number	SQD100N02-3M5L_GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 100A TO252AA	Lead Free Status / RoHS Status
Quantity Available	87860 pcs	Data sheet	SQD100N02-3M5L
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	2.5V @ 250µA
Vgs (Max)	±20V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-252AA	Series	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs	3.5 mOhm @ 30A, 10V	Power Dissipation (Max)	83W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	20V
Detailed Description	N-Channel 20V 100A (Tc) 83W (Tc) Surface Mount TO-252AA	Current - Continuous Drain (Id) @ 25°C	100A (Tc)

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