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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SQD35N05-26L-GE3

SQD35N05-26L-GE3

SQD35N05-26L-GE3

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Part Number	SQD35N05-26L-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 55V 30A TO252
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5025 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SQD35N05-26L-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 55V 30A TO252	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5025 pcs	Data sheet	SQD35N05-26L
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	2.5V @ 250µA
Vgs (Max)	±20V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-252, (D-Pak)	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	20 mOhm @ 20A, 10V	Power Dissipation (Max)	50W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1175pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	55V
Detailed Description	N-Channel 55V 30A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak)	Current - Continuous Drain (Id) @ 25°C	30A (Tc)

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