SISH106DN-T1-GE3
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See Product Specifications for product details.
Buy SISH106DN-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SISH106DN-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CHAN PPAK 1212-8SH |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 3000 pcs | ||||
|---|---|---|---|---|---|
| $0.282 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SISH106DN-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CHAN PPAK 1212-8SH | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 85248 pcs | Data sheet | SISH106DN |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Vgs (Max) | ±12V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® 1212-8SH | Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 6.2 mOhm @ 19.5A, 4.5V | Power Dissipation (Max) | 1.5W (Ta) |
| Packaging | Tape & Reel (TR) | Package / Case | PowerPAK® 1212-8SH |
| Other Names | SISH106DN-T1-GE3TR | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 42 Weeks | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Drain to Source Voltage (Vdss) | 20V | Detailed Description | N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
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