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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIRA80DP-T1-RE3

SIRA80DP-T1-RE3

SIRA80DP-T1-RE3
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number SIRA80DP-T1-RE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 30V POWERPAK SO-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 62023 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.687$0.621$0.499$0.388$0.322

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Target Price:(USD)
Quantity:
Total:
$0.687

Product parameter

Part Number SIRA80DP-T1-RE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 30V POWERPAK SO-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 62023 pcs Data sheet SIRA80DP Datasheet
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) +20V, -16V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SO-8 Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 0.62 mOhm @ 20A, 10V Power Dissipation (Max) 104W (Tc)
Packaging Cut Tape (CT) Package / Case PowerPAK® SO-8
Other Names SIRA80DP-T1-RE3CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 32 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 9530pF @ 15V Gate Charge (Qg) (Max) @ Vgs 188nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8 Current - Continuous Drain (Id) @ 25°C 100A (Tc)

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