SIRA60DP-T1-RE3
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See Product Specifications for product details.
Buy SIRA60DP-T1-RE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIRA60DP-T1-RE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 30V 100A POWERPAKSO |
| Lead Free Status / RoHS Status |
| Reference Price (In US Dollars) | 6000 pcs | ||||
|---|---|---|---|---|---|
| $0.23 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SIRA60DP-T1-RE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 30V 100A POWERPAKSO | Lead Free Status / RoHS Status | |
| Quantity Available | 92768 pcs | Data sheet | SIRA60DP |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Vgs (Max) | +20V, -16V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SO-8 | Series | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs | 0.94 mOhm @ 20A, 10V | Power Dissipation (Max) | 57W (Tc) |
| Packaging | Tape & Reel (TR) | Package / Case | PowerPAK® SO-8 |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Manufacturer Standard Lead Time | 32 Weeks | Input Capacitance (Ciss) (Max) @ Vds | 7650pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V | Detailed Description | N-Channel 30V 100A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8 |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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