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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIRA12BDP-T1-GE3

SIRA12BDP-T1-GE3

SIRA12BDP-T1-GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number SIRA12BDP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 30V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 151387 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.327$0.287$0.221$0.164$0.131

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Target Price:(USD)
Quantity:
Total:
$0.327

Product parameter

Part Number SIRA12BDP-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 30V Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 151387 pcs Data sheet SIRA12BDP
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.4V @ 250µA
Vgs (Max) +20V, -16V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SO-8 Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 4.3 mOhm @ 10A, 10V Power Dissipation (Max) 5W (Ta), 38W (Tc)
Packaging Cut Tape (CT) Package / Case PowerPAK® SO-8
Other Names SIRA12BDP-T1-GE3CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 42 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 15V Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8 Current - Continuous Drain (Id) @ 25°C 27A (Ta), 60A (Tc)

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