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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3
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Part Number SIRA10BDP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 30V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 182347 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.126

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Target Price:(USD)
Quantity:
Total:
$0.126

Product parameter

Part Number SIRA10BDP-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 30V Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 182347 pcs Data sheet SIRA10BDP
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.4V @ 250µA
Vgs (Max) +20V, -16V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SO-8 Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 3.6 mOhm @ 10A, 10V Power Dissipation (Max) 5W (Ta), 43W (Tc)
Packaging Tape & Reel (TR) Package / Case PowerPAK® SO-8
Other Names SIRA10BDP-T1-GE3TR Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 42 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 15V Gate Charge (Qg) (Max) @ Vgs 36.2nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8 Current - Continuous Drain (Id) @ 25°C 30A (Ta), 60A (Tc)

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