SIHU3N50DA-GE3
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See Product Specifications for product details.
Buy SIHU3N50DA-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIHU3N50DA-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CHANNEL 500V 3A IPAK |
| Lead Free Status / RoHS Status |
| Reference Price (In US Dollars) | 3000 pcs | ||||
|---|---|---|---|---|---|
| $0.139 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SIHU3N50DA-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CHANNEL 500V 3A IPAK | Lead Free Status / RoHS Status | |
| Quantity Available | 139494 pcs | Data sheet | SIHU3N50DA |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | IPAK (TO-251) | Series | - |
| Rds On (Max) @ Id, Vgs | 3.2 Ohm @ 1.5A, 10V | Power Dissipation (Max) | 69W (Tc) |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Manufacturer Standard Lead Time | 18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds | 177pF @ 100V | Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Type | N-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 500V |
| Detailed Description | N-Channel 500V 3A (Tc) 69W (Tc) Through Hole IPAK (TO-251) | Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
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