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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHP23N60E-GE3

SIHP23N60E-GE3

SIHP23N60E-GE3
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Part Number SIHP23N60E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 600V 23A TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 58973 pcs
Reference Price
(In US Dollars)
1000 pcs
$0.671

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Target Price:(USD)
Quantity:
Total:
$0.671

Product parameter

Part Number SIHP23N60E-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 600V 23A TO-220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 58973 pcs Data sheet SIHP23N60E-GE3
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB Series -
Rds On (Max) @ Id, Vgs 158 mOhm @ 12A, 10V Power Dissipation (Max) 227W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2418pF @ 100V Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-220AB Current - Continuous Drain (Id) @ 25°C 23A (Tc)

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