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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHP22N65E-GE3

SIHP22N65E-GE3

SIHP22N65E-GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number SIHP22N65E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 650V 22A TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 34687 pcs
Reference Price
(In US Dollars)
1000 pcs
$1.041

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Target Price:(USD)
Quantity:
Total:
$1.041

Product parameter

Part Number SIHP22N65E-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 650V 22A TO-220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 34687 pcs Data sheet Packaging InformationSIHP22N65E
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB Series -
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Power Dissipation (Max) 227W (Tc)
Packaging Tube Package / Case TO-220-3
Other Names SIHP22N65E-GE3CT
SIHP22N65E-GE3CT-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2415pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V Detailed Description N-Channel 650V 22A (Tc) 227W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C 22A (Tc)

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