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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5447DC-T1-GE3

SI5447DC-T1-GE3

SI5447DC-T1-GE3

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Part Number	SI5447DC-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 3.5A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5072 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI5447DC-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 3.5A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5072 pcs	Data sheet	Si5447DC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Vgs (Max)	±8V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	1206-8 ChipFET™	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	76 mOhm @ 3.5A, 4.5V	Power Dissipation (Max)	1.3W (Ta)
Packaging	Tape & Reel (TR)	Package / Case	8-SMD, Flat Lead
Other Names	SI5447DC-T1-GE3TR	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 3.5A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™	Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)

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