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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5445BDC-T1-GE3

SI5445BDC-T1-GE3

SI5445BDC-T1-GE3
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Part Number SI5445BDC-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 8V 5.2A 1206-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5502 pcs
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Part Number SI5445BDC-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 8V 5.2A 1206-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5502 pcs Data sheet SI5445BDC
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V Technology MOSFET (Metal Oxide)
Supplier Device Package 1206-8 ChipFET™ Series TrenchFET®
Rds On (Max) @ Id, Vgs 33 mOhm @ 5.2A, 4.5V Power Dissipation (Max) 1.3W (Ta)
Packaging Tape & Reel (TR) Package / Case 8-SMD, Flat Lead
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V FET Type P-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 8V Detailed Description P-Channel 8V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta)

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