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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4936BDY-T1-GE3

SI4936BDY-T1-GE3

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Part Number SI4936BDY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 30V 6.9A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 85417 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.574$0.506$0.40$0.31$0.245

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$0.574

Product parameter

Part Number SI4936BDY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 30V 6.9A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 85417 pcs Data sheet SI4936BDY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SO Series TrenchFET®
Rds On (Max) @ Id, Vgs 35 mOhm @ 5.9A, 10V Power - Max 2.8W
Packaging Original-Reel® Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4936BDY-T1-GE3DKR Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 33 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 15V Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2.8W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 6.9A Base Part Number SI4936

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