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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4931DY-T1-GE3

SI4931DY-T1-GE3

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Part Number SI4931DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2P-CH 12V 6.7A 8SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 125604 pcs
Reference Price
(In US Dollars)		2500 pcs
$0.168

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$0.168

Product parameter

Part Number SI4931DY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2P-CH 12V 6.7A 8SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 125604 pcs Data sheet SI4931DY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 350µA
Supplier Device Package 8-SO Series TrenchFET®
Rds On (Max) @ Id, Vgs 18 mOhm @ 8.9A, 4.5V Power - Max 1.1W
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4931DY-T1-GE3TR
SI4931DYT1GE3		 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 33 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds - Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V
FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V Detailed Description Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 6.7A Base Part Number SI4931

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