SI4190DY-T1-GE3
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See Product Specifications for product details.
Buy SI4190DY-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SI4190DY-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 100V 20A 8-SOIC |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SI4190DY-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 100V 20A 8-SOIC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 4268 pcs | Data sheet | SI4190DY |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Vgs (Max) | ±20V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-SO | Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 15A, 10V | Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) |
| Packaging | Cut Tape (CT) | Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Other Names | SI4190DY-T1-GE3CT | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 100V | Detailed Description | N-Channel 100V 20A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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