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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4170DY-T1-GE3

SI4170DY-T1-GE3

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Part Number	SI4170DY-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 30V 30A 8-SOIC
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5104 pcs
Reference Price (In US Dollars)	Get a quote

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Product parameter

Part Number	SI4170DY-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 30V 30A 8-SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5104 pcs	Data sheet	SI4170DY
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	2.6V @ 250µA
Vgs (Max)	±20V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	8-SO	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	3.5 mOhm @ 15A, 10V	Power Dissipation (Max)	3W (Ta), 6W (Tc)
Packaging	Cut Tape (CT)	Package / Case	8-SOIC (0.154", 3.90mm Width)
Other Names	SI4170DY-T1-GE3CT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	4355pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	30V	Detailed Description	N-Channel 30V 30A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C	30A (Tc)

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