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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > SMUN5311DW1T3G

SMUN5311DW1T3G

SMUN5311DW1T3G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number SMUN5311DW1T3G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN/PNP PREBIAS SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1541263 pcs
Reference Price
(In US Dollars)		10000 pcs30000 pcs50000 pcs
$0.018$0.017$0.015

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Part Number SMUN5311DW1T3G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN/PNP PREBIAS SOT363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1541263 pcs Data sheet MUN5311DW1, NSBC114EPXxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-363 Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 187mW Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363 Other Names SMUN5311DW1T3G-ND
SMUN5311DW1T3GOSTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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