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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > SMUN5235DW1T3G

SMUN5235DW1T3G

SMUN5235DW1T3G
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Part Number SMUN5235DW1T3G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2NPN PREBIAS 0.187W SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 711631 pcs
Reference Price
(In US Dollars)		10000 pcs
$0.034

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$0.034

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Part Number SMUN5235DW1T3G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2NPN PREBIAS 0.187W SOT363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 711631 pcs Data sheet MUN5235DW1, NSBC123JDxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package SOT-363 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 187mW Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 40 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SOT-363 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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