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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > NSVMMUN2212LT1G

NSVMMUN2212LT1G

NSVMMUN2212LT1G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number NSVMMUN2212LT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 0.246W SOT23
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1460314 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs30000 pcs75000 pcs
$0.025$0.023$0.02$0.019$0.017

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Product parameter

Part Number NSVMMUN2212LT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 0.246W SOT23 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1460314 pcs Data sheet MUN(2,5)212, MMUN2212L, DTC1234Exx, NSBC124EF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-23-3 (TO-236) Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 22 kOhms
Power - Max 246mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names NSVMMUN2212LT1G-ND
NSVMMUN2212LT1GOSTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 24 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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