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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > NSVMMUN2131LT1G

NSVMMUN2131LT1G

NSVMMUN2131LT1G
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Part Number NSVMMUN2131LT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 0.246W SOT23
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 998679 pcs
Reference Price
(In US Dollars)		6000 pcs
$0.022

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Product parameter

Part Number NSVMMUN2131LT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 0.246W SOT23 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 998679 pcs Data sheet MUN(2,5)131, MMUN2131L, DTA123Exx, NSBA123EF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SOT-23-3 (TO-236) Series -
Resistor - Emitter Base (R2) 2.2 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 246mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 36 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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